fqs4903.pdf Principales características:
May 2000 TM QFET QFET QFET QFET 500V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. pin #1 AbsoIute Maximum Ratings T = 25 C unless otherwise noted SymboI Parameter FQS4903 Units VDSS
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