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hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Principales características:

hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Short Circuit Rating moderately between 25oC and 150oC. Low Conduction Loss The IGBT is ideal for many high voltage switching Related Literature applications operating at moderate frequencies where low - TB334 Guidelines for Soldering Surface Mount conduction losses are essential, such as AC and DC motor Components to PC

 

Keywords - ALL TRANSISTORS. Principales características

 hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Design, MOSFET, Power

 hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Database, Innovation, IC, Electricity

 

 
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