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HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oCa MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Short Circuit Ratingmoderately between 25oC and 150oC. Low Conduction LossThe IGBT is ideal for many high voltage switching Related Literatureapplications operating at moderate frequencies where low - TB334 Guidelines for Soldering Surface Mount conduction losses are essential, such as: AC and DC motor Components to PC