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hgt1s7n60c3ds hgtp7n60c3d.pdf Principales características:

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September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time...................140ns at TJ = 150oC loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The Short Circuit Rating IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type Low Conduction Loss TA49057. Hyperfast Anti-Parallel Diode The IGBT is ideal for many high voltage swit

 

Keywords - ALL TRANSISTORS. Principales características

 hgt1s7n60c3ds hgtp7n60c3d.pdf Design, MOSFET, Power

 hgt1s7n60c3ds hgtp7n60c3d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgt1s7n60c3ds hgtp7n60c3d.pdf Database, Innovation, IC, Electricity

 

 
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