hgtg12n60c3d.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hgtg12n60c3d.pdf Principales características:

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Low Conduction Loss transistor. The much lower on-state voltage drop varies only Hyperfast Anti-Parallel Diode moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel Packaging with the IGBT is the development type TA49061. JEDEC STYLE TO-247 The IGBT is ideal for many high voltage switching E applications operating at moderate