hgtg20n60a4 hgtp20n60a4.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hgtg20n60a4 hgtp20n60a4.pdf Principales características:

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20A high voltage switching devices combining the best features 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capability high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC on-state voltage drop varies only moderately between 25oC Low Conduction Loss and 150oC. Temperature Compensating SABER Model This IGBT is ideal for many high voltage switching www.intersil.com applications operating at high frequencies where low conduction losses are essential. This device has been Related L