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HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance PSPICE and SABER Models achieves the lowest possible on-resistance per silicon area, Available on the WEB at www.fairchildsemi.com resulting in outstanding performance. This device is capable Peak Current vs Pulse Width Curve of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored UIS Rating Curve charge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators,

 

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 huf75343.pdf Design, MOSFET, Power

 huf75343.pdf RoHS Compliant, Service, Triacs, Semiconductor

 huf75343.pdf Database, Innovation, IC, Electricity

 

 
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