j210.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

j210.pdf Principales características:

J210 MMBFJ210 J211 MMBFJ211 J212 MMBFJ212 G S G TO-92 S SOT-23 D NOTE Source & Drain D Mark 62V / 62W / 62X are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA 5 Operating and Storage Junction Temperature Range -55 to +150 TJ ,Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications in