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ftk40p04d.pdf Principales características:

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SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0 2 L F F J 0 5 0 1 FEATURES 1 2 3 10 L 0 50 0 O 1 6 0 2 High density cell design for ultra low RDS(ON) Q 0 95 MAX 1 GATE Fully characterized Avalanche voltage and current 2 DRAIN 3 SOURCE Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability D-PAK (TO-252) APPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency c

 

Keywords - ALL TRANSISTORS. Principales características

 ftk40p04d.pdf Design, MOSFET, Power

 ftk40p04d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ftk40p04d.pdf Database, Innovation, IC, Electricity

 

 

 


 
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