Todos los transistores

2sk3588-01l-s-sj.pdf Principales características:

2SK3588-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to p4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 100 V VDSX *5 70 V Equivalent circuit schematic Continuous drain current ID 73 A Pulsed drain current ID(puls] 292 A Gate-source voltage VGS 30 V Drain(D) Non-repetitive Avalanche current IAS *2 73 A Maximum Avalanche Energy EAS *1 319.2 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/ s Peak Diode Recovery dV/dt dV/dt *3 5 kV/ s Gate(G) Max. power dissipation PD Ta=25 C 2.02 W Source(S) Tc=

Keywords - ALL TRANSISTORS. Principales características

 2sk3588-01l-s-sj.pdf Design, MOSFET, Power

 2sk3588-01l-s-sj.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3588-01l-s-sj.pdf Database, Innovation, IC, Electricity