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2sk3606-01.pdf Principales características:

2SK3606-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 200 V VDSX *5 170 V Equivalent circuit schematic Continuous drain current ID 18 A Pulsed drain current ID(puls] 72 A Gate-source voltage VGS 30 V Drain(D) Non-repetitive Avalanche current IAS *2 18 A Maximum Avalanche Energy EAS *1 125.5 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/ s Peak Diode Recovery dV/dt dV/dt *3 5 kV/ s Gate(G) Max. power dissipation PD Ta=25 C 2.02 W Source(S) Tc=25 C 1

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 2sk3606-01.pdf Design, MOSFET, Power

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