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hgtg20n1.pdf Principales características:

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S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 34A, 1000V EMITTER Latch Free Operation COLLECTOR Typical Fall Time 520ns GATE High Input Impedance Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately Terminal Diagram between +25oC and +150oC. N-CHANNEL ENHANCEMENT MODE IGBTs are ideal for many high voltage switching applications C operating at frequencies where low conduction losses are essen- tial, such as AC and DC motor controls, power supplies and drivers for solen

 

Keywords - ALL TRANSISTORS. Principales características

 hgtg20n1.pdf Design, MOSFET, Power

 hgtg20n1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgtg20n1.pdf Database, Innovation, IC, Electricity

 

 
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