hgtg20n120.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hgtg20n120.pdf Principales características:

S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1200V Latch Free Operation EMITTER Typical Fall Time - 780ns COLLECTOR GATE High Input Impedance COLLECTOR Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop Terminal Diagram varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications C operating at frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors