hgtg20n6.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hgtg20n6.pdf Principales características:

S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package 40A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oC E C Short Circuit Rated G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. Terminal Diagram The IGBT is ideal for many high voltage switching applications oper- N-CHANNEL ENHANCEMENT MODE ating at moderate frequencies where low con