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2sc1212.pdf Principales características:

2sc12122sc1212

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power dissipation PC 0.75 0.75 W PC*1 88W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note 1. Value at TC = 25 C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25 C) 2SC1212 2SC1212A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 50 80 V IC = 1 mA, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 50 80 V IC = 10 mA, RBE = breakdown voltage Emitter to base

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1212.pdf Design, MOSFET, Power

 2sc1212.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1212.pdf Database, Innovation, IC, Electricity

 

 

 


 
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