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2sc1214.pdf Principales características:

2sc12142sc1214

2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 50 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 4 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 20 V,

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1214.pdf Design, MOSFET, Power

 2sc1214.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1214.pdf Database, Innovation, IC, Electricity

 

 

 


 
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