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2sc1345.pdf Principales características:

2SC1345(K) Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1345 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 55 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 18 V, IE = 0 Emitter cutoff cu

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 2sc1345.pdf Design, MOSFET, Power

 2sc1345.pdf RoHS Compliant, Service, Triacs, Semiconductor

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