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2sd1126.pdf Principales características:

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k 130 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 10 A Collector peak current IC(peak) 15 A Collector power dissipation PC*1 50 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C C to E diode forward current ID 10 A Note 1. Value at TC = 25 C. Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO 120 V IC = 25 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 7 V IE = 200 mA, IC = 0 voltage Collector cutoff

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