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2sd1368.pdf Principales características:

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2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current IC 1A Collector peak current iC(peak)*1 1.5 A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 100 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 V I

 

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