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2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http //www.digchip.com at this page 2SJ450 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 1 A Drain peak current ID(pulse)*1 2 A Drain peak current IDR 1 A Channel dissipation Pch*2 1W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 100 s, duty cycle 10% 2. When using aluminium ceramic board (12.5 20 70 mm) 2 2SJ450 Electrical Characteristics (Ta = 25 C) Item Symbol Min

 

Keywords - ALL TRANSISTORS. Principales características

 2sj450.pdf Design, MOSFET, Power

 2sj450.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj450.pdf Database, Innovation, IC, Electricity

 

 
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