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hat2049t.pdf Principales características:

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HAT2049T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-723 (Z) 1st. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 1 5 8 D D D 4 G 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate S S S S 2 3 7 6 HAT2049T Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 12 V Drain current ID 8A Drain peak current ID(pulse)Note1 64 A Body-drain diode reverse drain current IDR 8A Channel dissipation Pch Note2 1.3 W Channel temperature Tch 150 C Storage temperature Tstg 55 to + 150 C Note 1. PW 10 s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25 C) Item Symbol M

 

Keywords - ALL TRANSISTORS. Principales características

 hat2049t.pdf Design, MOSFET, Power

 hat2049t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hat2049t.pdf Database, Innovation, IC, Electricity

 

 
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