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hat2052t.pdf Principales características:

HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C (Z) 4th. Edition Feb. 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2052T Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 28 V Gate to source voltage VGSS 12 V Drain current ID 5.0 A Drain peak current ID(pulse)Note1 40 A Body-drain diode reverse drain current IDR 5.0 A Channel dissipation Pch Note2 1.0 W Channel dissipation Pch Note3 1.5 W Channel temperature Tch 150 C Storage temperature Tstg 55 to + 150 C Note 1. PW 10 s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.

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