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HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B (Z) Preliminary 3rd. Edition Dec. 1998 Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP 6 4 5 6 3 1 2 5 6 2 D D D D 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID*2 6.3 A Drain peak current ID(pulse) *1 25.2 A Body-drain diode reverse drain current IDR*2 6.3 A Channel dissipation Pch(pulse)*2 2.0 W Pch(continuous)*3 1.05 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5s,Ta=25 C 3. When us

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