Todos los transistores

 

2n4898 2n4899 2n4900.pdf Principales características:

2n4898_2n4899_2n49002n4898_2n4899_2n4900

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N4898 -40 VCBO Collector-base voltage 2N4899 Open emitter -60 V 2N4900 -80 2N4898 -40 VCEO Collector-emitter voltage 2N4899 Open base -60 V 2N4900 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.0 A ICM Collector current-peak -4.0 A IB Base current -1.0 A PD Total Power Dissipation TC=25 25 W Tj Junction temperature 150 Tstg S

 

Keywords - ALL TRANSISTORS. Principales características

 2n4898 2n4899 2n4900.pdf Design, MOSFET, Power

 2n4898 2n4899 2n4900.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n4898 2n4899 2n4900.pdf Database, Innovation, IC, Electricity

 

 

 


 
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