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2n4922.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4922 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector Saturatioin Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4919 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1 A C I Collector Current-Peak 3 A CM I Collector Current-Continuous 1 A B Collector Power Dissipation P 30 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -65 150 T stg THERMAL CHARACTERIS

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 2n4922.pdf Design, MOSFET, Power

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