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2n5038.pdf Principales características:

2n50382n5038

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5038 DESCRIPTION High Speed-t = 0.5 s (Max) f Low Saturation Voltage- V 2.5V@ I = 20A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 150 V CBO V Collector-Emitter Voltage 90 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 20 A C I Base Current-Continuous 5 A B P Collector Power Dissipation @T =25 140 W C C T Junction Temperature 200 J Storage Temperature Range -65 200 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resista

 

Keywords - ALL TRANSISTORS. Principales características

 2n5038.pdf Design, MOSFET, Power

 2n5038.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5038.pdf Database, Innovation, IC, Electricity

 

 

 


 
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