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2n6109.pdf Principales características:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6109 DESCRIPTION DC Current Gain- h = 30-150@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -7 A C I Collector Current-Peak -10 A CM I Base Current -3 A B Collector Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance, Junction to Case 3.125 /W th

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