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2sc1212.pdf Principales características:

2sc12122sc1212

isc Silicon NPN Power Transistor 2SC1212 DESCRIPTION High Collector Current I = 1A C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current-Continuous 1 A C Collector Power Dissipation 8 @ T =25 C P W C Collector Power Dissipation 0.75 @ T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1212 ELECTRICAL CHARACTERISTICS T =25 u

 

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 2sc1212.pdf Design, MOSFET, Power

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