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2sc1235.pdf Principales características:

2sc12352sc1235

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1235 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 0.1 A C Collector Power Dissipation P 6.5 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 19.23 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconduc

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1235.pdf Design, MOSFET, Power

 2sc1235.pdf RoHS Compliant, Service, Triacs, Semiconductor

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