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2sc1295.pdf Principales características:

2sc12952sc1295

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1295 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 2 A C Collector Power Dissipation P 40 W C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.125 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Tr

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1295.pdf Design, MOSFET, Power

 2sc1295.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1295.pdf Database, Innovation, IC, Electricity

 

 
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