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2sc1325.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1325 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C Collector Power Dissipation P 80 W C T Junction Temperature -65 200 J T Storage Temperature Range -65 200 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.187 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Tra

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 2sc1325.pdf Design, MOSFET, Power

 2sc1325.pdf RoHS Compliant, Service, Triacs, Semiconductor

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