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2sc1367.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1367 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1.0 A C Collector Power Dissipation P 50 W C T Junction Temperature -65 200 J T Storage Temperature Range -65 200 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.5 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC136

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 2sc1367.pdf Design, MOSFET, Power

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