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2sc1368.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1368 DESCRIPTION High Collector Current I = 1.5A C Collector-Emitter Breakdown Voltage- V = 25V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 25 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1.5 A C Collector Power Dissipation 8 @ T =25 C P W C Collector Power Dissipation 0.75 @ T =25 a T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor i

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