2sc1403.pdf datasheet:

isc Silicon NPN Power Transistor 2SC1403 DESCRIPTION Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 8 A C Collector Power Dissipation P 70 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -50 150 T stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1403 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V Collector- Emitter Breakdown Voltage I = 50mA ; I = 0 100 V (BR)CEO C E