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2sc1413a.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION High Collector-base breakdown voltage 1500V Low saturation voltage@5A Large area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the horizontal output stage in power-transformer-less television receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 5 A C Collector Power Dissipation 50 @ T =25 C P W C Collector Power Dissipation 20 @ T =25 a T Junction Temperature 230 J T Storage Temperature Range -45 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN

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