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2sc1431.pdf Principales características:

2sc14312sc1431

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 110 V CBO V Collector-Emitter Voltage 110 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 2 A C Collector Power Dissipation P 23 W C T Junction Temperature -65 200 J T Storage Temperature Range -65 200 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 7.6 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1431.pdf Design, MOSFET, Power

 2sc1431.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1431.pdf Database, Innovation, IC, Electricity

 

 
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