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2sc1444.pdf Principales características:

2sc14442sc1444

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1444 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C Collector Power Dissipation P 40 W C @ T =25 C T Junction Temperature -65 150 J T Storage Temperature Range -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.125 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transis

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1444.pdf Design, MOSFET, Power

 2sc1444.pdf RoHS Compliant, Service, Triacs, Semiconductor

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