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2sc1446.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1446 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 0.1 A C Total Power Dissipation P 10 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 12.5 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor is

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