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2sc1456.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1456 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 0.15 A C Collector Power Dissipation P 10 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 12.5 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transis

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 2sc1456.pdf Design, MOSFET, Power

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