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2sc1469.pdf Principales características:

2sc14692sc1469

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1469 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C Collector Power Dissipation P 100 W C T Junction Temperature 200 J T Storage Temperature Range -65 200 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 17.5 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1469 E

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1469.pdf Design, MOSFET, Power

 2sc1469.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1469.pdf Database, Innovation, IC, Electricity

 

 
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