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2sc2768.pdf Principales características:

isc Silicon NPN Power Transistor 2SC2768 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Voltage 200 V CEO V Collector-Emitter Voltage 200 V CEO(SUS) V Emitter-Base voltage 7 V EBO I Collector Current-Continuous 6 A C I Base Current-Continuous 1.5 A B Collector Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junc

Keywords - ALL TRANSISTORS. Principales características

 2sc2768.pdf Design, MOSFET, Power

 2sc2768.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc2768.pdf Database, Innovation, IC, Electricity