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2sc2791.pdf Principales características:

isc Silicon NPN Power Transistor 2SC2791 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications Switching regulator applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 5 A C I Base Current-Continuous 3 A B Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2791 ELECTRICA

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 2sc2791.pdf Design, MOSFET, Power

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