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2sc3527.pdf Principales características:

isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base voltage 7 V EBO I Collector Current-Continuous 15 A C I Collector Current-Peak 25 A CM I Base Current-Continuous 6 A B Collector Power Dissipation 100 @ T =25 C P W C Collector Power Dissipation 3 @ T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transis

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 2sc3527.pdf Design, MOSFET, Power

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