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2sc4235.pdf Principales características:

2sc42352sc4235

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4235 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 3 A C I Collector Current-Peak 6 A CM I Base Current-Continuous 1 A B I Base Current-Peak 2 A BM Total Power Dissipation P 80 W T @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.56 /W th j-c 1

 

Keywords - ALL TRANSISTORS. Principales características

 2sc4235.pdf Design, MOSFET, Power

 2sc4235.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4235.pdf Database, Innovation, IC, Electricity

 

 

 


 
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