2sc4237.pdf Principales características:
isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 20 A CM I Base Current-Continuous 4 A B I Base Current-Peak 8 A BM Total Power Dissipation P 150 W T @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 0.83 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi i
Keywords - ALL TRANSISTORS. Principales características
2sc4237.pdf Design, MOSFET, Power
2sc4237.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc4237.pdf Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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