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2sc4242.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.8V(Max.)@ I = 4.0A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as swit- ching regulator s, inverters, DC-DC converter. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 7 A C I Collector Current-Peak 14 A CM I Base Current-Continuous 2 A B Collector

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 2sc4242.pdf Design, MOSFET, Power

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