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2sc4245.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION High Current-Gain Bandwidth Product f = 2400MHz TYP. @V = 10 V, I = 2 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner , UHF mixer applications VHF UHF band RF amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current-Continuous 50 mA C I Base Current-Continuous 25 mA B Collector Power Dissipation P 0.1 W C @T =25 C T Junction Temperature 125 J Storage Temperature Range -55 125 T stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN RF Transistor 2S

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