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2sc4251.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION High f T- f = 1100 MHz TYP. T Low Output Capacitance- C = 0.9 pF TYP. OB 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current-Continuous 50 mA C I Base Current-Continuous 25 mA B Collector Power Dissipation P 0.1 W C @T =25 C T Junction Temperature 125 J Storage Temperature Range -55 125 T stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 ELECTRICAL CHARACTERISTICS T =

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