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2sc4261.pdf Principales características:

2sc42612sc4261

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 25 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 3.0 V EBO I Collector Current-Continuous 50 mA C Collector Power Dissipation P 0.1 W C @T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V Collector-Base Br

 

Keywords - ALL TRANSISTORS. Principales características

 2sc4261.pdf Design, MOSFET, Power

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