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2sc4297.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4297 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current-Continuous 12 A C I Collector Current-Peak 24 A CM I Base Current-Continuous 4 A B Collector Power Dissipation P 75 W C @T =25 C T Junction Temperature 150 J Storage Temperature -55 150 T stg 1 isc Website isc & iscsemi is registered trademark www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN

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